We prepare thin films (<3nm) of Pr₂O₃ films on 4H-SiC(0001) surfaces by a wet chemical process involving aqueous solutions of Pr(NO₃)₄. We use surfaces covered by a native oxide and such with the oxide being removed by HF dip. We determine the roughness of these films by AFM studies and their chemical composition by XPS measurements. Synchrotron radiation photoelectron spectroscopy (SR-PES) is used to study the core levels in more detail. We report on the thickness dependent variations in the O1s core level and determine the relative abundance of graphitic carbon in the interface regime from the C1s emission. The Si2p core level emission is analysed in detail and reveals that a silicate is formed at the interface and the thickness of that interfacial layer is determined. Our data are compared to corresponding studies of the Pr₂O₃ interaction with Si(100) surfaces /1,2/.

/1/ H.J.Osten, J.P.Liu, H.J.Muessig, Appl.Phys.Lett. 80 (2002) 297.
/2/ D. Schmeisser, Comp.Materials Science, in press.

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1. XPS and AFM investigations of buffer layer between Si(100) and 3C-SiC, created by interaction with C₂H₂