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Energy transfer to Er3+ ions in silicon-rich-silicon-oxide: efficiency lamitations.
|Dmitry Kuritsyn 2, A Kozanecki 2, H. Przybylinska 2, W Jantsch 1|
1. Institut für Halbleiterphysik Universität Linz, Altenberger Str. 69, Linz A-4040, Austria
A detailed investigation of the excitation mechanisms of the 4I13/2-4I15/2 intra-4f-shell luminescence of Er3+ ions near 1.5 μm in silicon-rich silicon oxide (SRSO) is reported. SRSO:Er was produced by high dose implantation of Si+ ions into SiO2 layers grown on silicon, followed by Er+ implantation at an energy of 800 keV. Samples were thermally annealed up to 1100oC to create different types of defects and Si-nanocrystals (nc-Si). Photoluminescence excitation (PLE) spectra were obtained using optical parametric oscillator (OPO) and Ti:Sapphire laser in the range 420-680 and 720-830 nm, respectively.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Dmitry Kuritsyn
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-26 17:01 Revised: 2009-06-08 12:55