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dr Saulius Miasojedovas
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Affiliation:
Institute of Material Science and Applied Research
address:
Sauletekio 9, III bld., Vilnius, LT-10222,
Lithuania
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Participant:
E-MRS Fall Meeting 2003
began:
2003-09-15
ended:
2003-09-11
Presented:
E-MRS Fall Meeting 2003
Stimulated emission in InGaN/GaN structures with different quantum well width
Participant:
E-MRS Fall Meeting 2007
began:
2007-09-17
ended:
2007-11-30
Presented:
E-MRS Fall Meeting 2007
Carrier recombination under one-photon and two-photon excitation in GaN epilayers
Publications:
Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN
Carrier recombination under one-photon and two-photon excitation in GaN epilayers
Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy
Stimulated emission in InGaN/GaN structures with different quantum well width
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