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Effect of deposition conditions and annealing on residual stress of ITO films magnetron sputtered on silica

Arnoldas Užupis 3Renata Butkute 1Bonifacas Vengalis 1Vaclovas Lisauskas 1Sigitas Tamulevičius 2

1. Semiconductor Physics Institute, A.Gostauto 11, Vilnius LT-2600, Lithuania
2. Kaunas University of Technology, Institute of Physical Electronics (KTU FEI), Savanoriu 271, Kaunas LT-3009, Lithuania
3. Lithuanian University of Ugriculture (LZUU), Studentu 11, Kaunas Lt-4324, Lithuania


Thin films of indium-tin oxide (ITO) (d~1000 nm) were deposited on heated (Td= 20-500 C) glass (silica) substrates by reactive DC-magnetron sputtering followed by post-deposition annealing at T=(150-750) C in oxygen and vacuum. Highly conductive (10-4 Om) and transparent for visible light (~ 95%) films were deposited under Ar:O2 (1:1) pressure of about 1-3 Pa. Crystalline structure and surface quality of the films were studied by X-ray diffraction, scanning electron microscopy and atomic force microscopy. Optical interferometry was used to investigate residual stress in the films prepared under various deposition and annealing conditions. Influence of oxygen content and structural quality of the films on the residual stress has been defined.


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Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Arnoldas Užupis
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-23 11:31
Revised:   2009-06-08 12:55