The active control of spins in semiconductors leads to significant advances in technology of digital information storage, magnetic recording and sensing. Recently, Zutic and Fabian have theoretically considered a magnetic p-n junction [1, 2]. One side of the device was made of magnetic material with the giant spin splitting and the other one of a nonmagnetic semiconductor. The presence of external magnetic field could allow spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range. They predict new phenomena of exponential and giant magnetoresistance, spin-voltaic effect, spin-valve effect, when a non-equilibrium spin is added into the junction.
The goal of this study is to verify experimentally the predictions of Zutic and Fabian. For this purpose a set of p-n junctions with magnetic n-type (CdMnTe) and nonmagnetic p-type (CdZnTe) regions and a set of p-n junctions with non-magnetic n-type (CdTe) and magnetic p-type (CdZnMnTe) region have been grown by Molecular Beam Epitaxy. The content of Mn in CdMnTe varied from 1 to 5 %. The n-type conductivity was obtained by iodine doping. The nonmagnetic p-type CdZnTe contained from 1.0 to 7.5 % of Zn. p-type conductivity was obtained by nitrogen doping. The quality of grown structures was established from the photoluminescence spectra measured at 4K. The carrier (electrons in the magnetic n region and holes in the non-magnetic p region) concentration was evaluated from Hall measurements. The measurements of current-voltage, resistance-voltage and capacitance-voltage characteristics at different temperatures and different values of magnetic field is discussed from the point of view of spin dependent phenomena and compared to theoretical predictions of Zutic and Fabian.
[1] Zutic I., Fabian J., Das Sarma, Phys. Rev. B, 64, p121201 (2001).
[2] Zutic I., Fabian J., Das Sarma, Phys. Rev. Lett, 88, p066603 (2002).

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