Active films coatings on porous silicon (PS) surface with semiconductors and dielectrics such as oxide (Al2O3, SiOx), chalcogenide materials (ZnS, CdTe,GaSe), polymer films were created. Possibility of optocouple creation for the wide spectral range (as light emitter and detector) using PS was considered. Photoluminescence, electroluminescence, photosensitivity of porous silicon were investigated. Also it was used such additional methodics as photo-TSD, photo- and cathodoluminescence, photovoltaic effect, volt-current charascteristics method.
Investigated structures on the PS base have been possessed in the noticed photovoltaic sensitivity in the range of 1-3 eV and have been sensitive to the IR- and X-rays at the TSDC regime in the range of 77- 450 K.
Current-voltage characteristic investigation of single and double heterostructures were showed its magnificent sensitivity to the mechanical strains. We have investigated dependencies of the relative current change which depend on the pressure unit from tension sets on the heterostructure.
So it was indicate that obtained PS-silicon heterostructures possess photovoltaic properties in the wide spectral range. All these structures were possessed light-emitting properties under laser beam exciting and electron beam. Acessory application porous silicon heterostructures may be connect with sensitivity to mechanical strains.

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