Thin silicon carbide films have been obtained by reactive magnetron sputtering at varius temperatures under hydrogen rich plasma. Infrared absorption spectroscopy measurements reveal a crystalline fraction that increases from about 40% to 80% when the deposition temperature is increased from 300 to 600C. X-ray diffraction measurements show evidence of SiC nanocrystals embedded in an amorphous matrix. Moreover, preliminary dark conductivity measurements show a transport property behavior that appears quite compatible with the evolution of the structural features. Finally, SiC/Si heterojunctions based on Sb-doped SiC layers were fabricated and characterized, showing a relatively high rectification behavior together with a low leakage current.

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