In the last few years the request for high performance ultraviolet (UV) detectors has shown a growing of interest. These devices have been realized with traditional semiconductors (i.e. silicon) principally for the low cost of the material, owing to the well developed technology, which compensates for the difficulties to adapt a material with a low energy bandgap for such kind of applications. On the other hand, there are fields where only new, high energy bandgap, materials may be used (i.e.UV sun study, which needs a device with high discrimination ratio between visible and UV radiation). Nowadays, the intrinsic limitations of this material can be overcome by CVD diamond. The dynamic performance of photoconductive devices based on this material has been a topic over which many efforts have been spent. Very recently it has been proposed the use of photoconductive CVD diamond devices for pulsed UV radiation in the field of ULSI photolithography. Indeed, the needs of decreasing the active dimension of the electronic devices has lead to the use of excimer laser radiation for the photoresist exposition. For such kind of application, the principal request is for a good stability and very high MTBF, requirements not completely satisfied by silicon based devices. Diamond, with its threshold for radiation damage around 100 mJ/cm2, meets the specifications. The dynamic performance, noise, gain and band-width of PSDs made by CVD diamond will be presented and correlated with the material quality.