Time
|
Duration
|
Type
|
Presenting person
|
Title
|
September 15th, Monday |
|
| 14:00 |
00:45:00 |
invited oral |
Christian Morhain |
MBE growth of ZnO layers and their physical properties |
| 14:45 |
00:45:00 |
invited oral |
Henri Marriete |
Quantum dot formation induced by surface energy change of a strained two-dimensional layer |
| 15:50 |
00:45:00 |
invited oral |
Tim S. Jones |
Controlling the growth of InAs/GaAs quantum dots for long wavelength applications |
| 16:35 |
00:45:00 |
invited oral |
Sergei Dvoretsky |
MBE growth of HgCdTe layers and their properties in the context of IR applications |
| 17:35 |
00:15:00 |
oral |
Czeslaw Skierbiszewski |
The optimalisation of the GaN and GaN/AlGaN heterojunctions on bulk crystals using plasma-assisted molecular beam epitaxy |
| 17:50 |
00:15:00 |
oral |
J. Pezoldt |
Kinetic Monte Carlo simulation of SiC nucleation on Si(111) |
| 18:05 |
00:15:00 |
oral |
F. M. Morales |
The role of Ge predeposition temperature in the epitaxy of SiC on Silicon |
| 18:20 |
00:15:00 |
oral |
Ewa Dumiszewska |
Problems with cracking of Al_xGa_1_-_xN layers |
September 16th, Tuesday |
|
| 14:00 |
00:45:00 |
invited oral |
Wojciech Knap |
Magnetotransport investigations of AlGaN/GaN heterostructures grown on bulk GaN, SiC, and sapphire substrates |
| 14:45 |
00:45:00 |
invited oral |
Piotr Perlin |
Homoepitaxy of GaN-based blue and UV lasers |
| 15:50 |
00:45:00 |
invited oral |
Joerg Neugebauer |
Multiscale modelling of group-III nitride growth |
| 16:35 |
00:45:00 |
invited oral |
Nicolas GRANDJEAN |
Control of the polarity and crystal face of GaN epilayers grown by MBE |
| 17:35 |
00:15:00 |
oral |
Olga Kryliouk |
Growth and Characterization of GaN Epilayers on Si Substrates |
| 17:50 |
00:15:00 |
oral |
TERUO MOZUME |
Raman scattering study of InGaAs/AlAsSb and InGaAs/AlAs/AlAsSb heterostructures |
| 18:05 |
00:15:00 |
oral |
Janusz Sadowski |
Defects in GaMnAs - influence of annealing and growth conditions |
| 18:20 |
00:15:00 |
oral |
J. Pezoldt |
Alignment of SiC quantum dots on silicon substrates |
September 17th, Wednesday |
|
| 09:00 |
00:45:00 |
invited oral |
Peter Unger |
Technology of high power lasers |
| 09:45 |
00:45:00 |
invited oral |
Guillaume Huyet |
Sensitivity of quantum dot lasers to optical feedback |
| 11:00 |
00:45:00 |
invited oral |
Andrea Fiore |
III-V quantum dots: from lasers to single photons |
| 11:45 |
00:45:00 |
invited oral |
Friedrich Schaffler |
Heteroepitaxial growth instabilities on Si and their modelling by kinetic Monte Carlo simulations |
| 14:30 |
00:15:00 |
oral |
R. Akchurin |
Indium segregation effects in InGaAs/GaAs multiple QW heterostructures grown by MOCVD |
| 14:45 |
00:15:00 |
oral |
L. H. Nguyen |
Selective epitaxial growth of Ge/Si quantum dots on patterned Si(001) substrate by ultra high vacuum chemical vapor deposition |
| 15:00 |
00:15:00 |
oral |
A. Nikiforov |
Formation of Ge nanoislands on pure and oxidized Si surface by MBE |
September 18th, Thursday |
|
| 09:00 |
00:45:00 |
invited oral |
Oliver G. Schmidt |
Self-assembled semiconductor nanostructures |
| 09:45 |
00:45:00 |
invited oral |
Sven Einfeldt |
Strain effects in heteroepitaxy of nitrides |
| 11:00 |
00:45:00 |
invited oral |
Horst P. Strunk |
Relaxation of misfit-induced strains - from handicaps to benefits |
| 11:45 |
00:45:00 |
invited oral |
Marek Kisielewski |
Modification of magnetic properties of ultrathin cobalt layers by an overlayer structure |
| 14:30 |
00:15:00 |
oral |
Keiji Hayashi |
Spatial Profile of Neutral Free Radical Beam Produced by the Method of Photo-Deionization of Negative Ion Beams |
| 14:45 |
00:15:00 |
oral |
Mathieu Stoffel |
Self-assembled Ge/Si(001) islands extending the accessible wavelength region beyond 2 \mum |
| 15:00 |
00:15:00 |
oral |
J. Pezoldt |
3C-SiC:Ge alloys grown on Si (111) substrates by solid source MBE |
| 15:15 |
00:15:00 |
oral |
M. Halbwax |
Kinetics of heteroepitaxial growth of Ge on Si(001) at low temperature by UHV-CVD |
September 19th, Friday |
|
| 09:00 |
00:45:00 |
invited oral |
Fernando Briones |
In situ monitoring and control optical techniques during MBE growth of III-V nanostructures |
| 09:45 |
00:45:00 |
invited oral |
Armin S. Bader |
Real-Time in situ x-ray diffraction studies on ZnSe epilayers grown on (001)GaAs |
| 11:00 |
00:45:00 |
invited oral |
Andre Rocher |
TEM evaluation of stress and strain in III-V structures |
| 11:45 |
00:45:00 |
invited oral |
Hilde Hardtdegen |
MOVPE growth and in situ characterization of GaN layers |
