E-MRS Fall Meeting 2003

 on-line journal

Time
 Duration
 Type
 Presenting person
 Title

September 15th, Monday

14:00 00:45:00 invited oral Christian Morhain MBE growth of ZnO layers and their physical properties
14:45 00:45:00 invited oral Henri Marriete Quantum dot formation induced by surface energy change of a strained two-dimensional layer
15:50 00:45:00 invited oral Tim S. Jones Controlling the growth of InAs/GaAs quantum dots for long wavelength applications
16:35 00:45:00 invited oral Sergei Dvoretsky MBE growth of HgCdTe layers and their properties in the context of IR applications
17:35 00:15:00 oral Czeslaw Skierbiszewski The optimalisation of the GaN and GaN/AlGaN heterojunctions on bulk crystals using plasma-assisted molecular beam epitaxy
17:50 00:15:00 oral J. Pezoldt Kinetic Monte Carlo simulation of SiC nucleation on Si(111)
18:05 00:15:00 oral F. M. Morales The role of Ge predeposition temperature in the epitaxy of SiC on Silicon
18:20 00:15:00 oral Ewa Dumiszewska Problems with cracking of Al_xGa_1_-_xN layers

September 16th, Tuesday

14:00 00:45:00 invited oral Wojciech Knap Magnetotransport investigations of AlGaN/GaN heterostructures grown on bulk GaN, SiC, and sapphire substrates
14:45 00:45:00 invited oral Piotr Perlin Homoepitaxy of GaN-based blue and UV lasers
15:50 00:45:00 invited oral Joerg Neugebauer Multiscale modelling of group-III nitride growth
16:35 00:45:00 invited oral Nicolas GRANDJEAN Control of the polarity and crystal face of GaN epilayers grown by MBE
17:35 00:15:00 oral Olga Kryliouk Growth and Characterization of GaN Epilayers on Si Substrates
17:50 00:15:00 oral TERUO MOZUME Raman scattering study of InGaAs/AlAsSb and InGaAs/AlAs/AlAsSb heterostructures
18:05 00:15:00 oral Janusz Sadowski Defects in GaMnAs - influence of annealing and growth conditions
18:20 00:15:00 oral J. Pezoldt Alignment of SiC quantum dots on silicon substrates

September 17th, Wednesday
09:00 00:45:00 invited oral Peter Unger Technology of high power lasers
09:45 00:45:00 invited oral Guillaume Huyet Sensitivity of quantum dot lasers to optical feedback
11:00 00:45:00 invited oral Andrea Fiore III-V quantum dots: from lasers to single photons
11:45 00:45:00 invited oral Friedrich Schaffler Heteroepitaxial growth instabilities on Si and their modelling by kinetic Monte Carlo simulations
14:30 00:15:00 oral R. Akchurin Indium segregation effects in InGaAs/GaAs multiple QW heterostructures grown by MOCVD
14:45 00:15:00 oral L. H. Nguyen Selective epitaxial growth of Ge/Si quantum dots on patterned Si(001) substrate by ultra high vacuum chemical vapor deposition
15:00 00:15:00 oral A. Nikiforov Formation of Ge nanoislands on pure and oxidized Si surface by MBE

September 18th, Thursday

09:00 00:45:00 invited oral Oliver G. Schmidt Self-assembled semiconductor nanostructures
09:45 00:45:00 invited oral Sven Einfeldt Strain effects in heteroepitaxy of nitrides
11:00 00:45:00 invited oral Horst P. Strunk Relaxation of misfit-induced strains - from handicaps to benefits
11:45 00:45:00 invited oral Marek Kisielewski Modification of magnetic properties of ultrathin cobalt layers by an overlayer structure
14:30 00:15:00 oral Keiji Hayashi Spatial Profile of Neutral Free Radical Beam Produced by the Method of Photo-Deionization of Negative Ion Beams
14:45 00:15:00 oral Mathieu Stoffel Self-assembled Ge/Si(001) islands extending the accessible wavelength region beyond 2 \mum
15:00 00:15:00 oral J. Pezoldt 3C-SiC:Ge alloys grown on Si (111) substrates by solid source MBE
15:15 00:15:00 oral M. Halbwax Kinetics of heteroepitaxial growth of Ge on Si(001) at low temperature by UHV-CVD

September 19th, Friday

09:00 00:45:00 invited oral Fernando Briones In situ monitoring and control optical techniques during MBE growth of III-V nanostructures
09:45 00:45:00 invited oral Armin S. Bader Real-Time in situ x-ray diffraction studies on ZnSe epilayers grown on (001)GaAs
11:00 00:45:00 invited oral Andre Rocher TEM evaluation of stress and strain in III-V structures
11:45 00:45:00 invited oral Hilde Hardtdegen MOVPE growth and in situ characterization of GaN layers
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