Multiscale modelling of group-III nitride growth
|Joerg Neugebauer 2, Liverios Lymperakis 2, Chris G. Van de Walle 3, John E. Northrup 3, Randy Feenstra 1|
1. Carnegie Mellon University, Pittsburgh, PA 15213, United States
A first step towards controlling and improving the quality of semiconductor devices is a deeper understanding of the fundamental mechanisms during doping and growth. For example, the morphology and structure of the surface controls the sharpness and thus the electronic characteristics of the interfaces, the incorporation of dopants or the formation of nanostructure such as quantum dots.
Presentation: invited oral at E-MRS Fall Meeting 2003, Symposium C, by Joerg Neugebauer
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-13 10:11 Revised: 2009-06-08 12:55
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