One disadvantage of SiC for applications in electronic devices is the relative low carrier mo-bility. The creation of SiC:Ge alloys provide the opportunity to improve the electronic prop-erties in comparison to SiC epitaxial layers. The disadvantage of this system is the relatively low thermodynamical stability and the immiscibility of Ge in SiC. As a consequence nonequilibrium material synthesis methods must be applied to achieve 3C-SiC:Ge alloys. In this work for the first time a comprehensive research of SiC:Ge thin films grown on Si (111) substrates by solid source molecular beam epitaxy (SSMBE) will be presented. The layers were grown at substrate temperatures ranging from 1173 K to 1313 K with a growth rate of 0.6 nm/min. The 120 nm thick layers were characterized by x-ray diffraction (XRD), Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM). The structural analysis revealed that 3C-SiC:Ge alloys were grown. SIMS and AES measurements detected a Ge content of around 1 % and a significant Ge segregation at the SiC/Si interface (Fig.1). The dependence of Ge incorporation on growth temperature as well as on the strain in the SiC:Ge alloys will be discussed.

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2. Surface band bending at n-type and p-type InN by Auger Electron Spectroscopy
3. AlGaN/GaN based optical and electrical sensors
4. Alignment of SiC quantum dots on silicon substrates
5. Kinetic Monte Carlo simulation of SiC nucleation on Si(111)
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