Study of Si doped AlGaN by synchrotron radiation x-ray microprobe techniques

Andrea Somogyi 1Gema Martinez-Criado 2Alejandro Homs 2María De Los Ángele Hernández Fenollosa 3Delphine Vantelon 1Oliver Ambacher 4

1. SOLEIL, L'Orme des Merisiers, Saint Aubin 91192, France
2. European Synchrotron Radiation Facility (ESRF), Grenoble 38043, France
3. Applied Physics Department, Technical University Valencia, Valencia 46071, Spain
4. Technical University Ilmenau, Center of Micro- and Nanotechnologies (ZMN), Gustav-Kirchhoff-Str. 7, Ilmenau 98693, Germany


Blue and UV light emitting diodes (LEDs) and lasers based on AlN and GaN semiconductor compounds represent one of the most important breakthroughs in electronics and optoelectronics of recent years. By varying the composition of ternary AlxGa(1-x)N alloys and by the achievement of controlled doping, the optical and electrical properties can be tuned over a wide spectral range.

So far, n-type conductivity is commonly obtained by the incorporation of Si, which is supposed to substitute for Ga or Al in the GaN or AlN lattice, respectively. The dependence of the AlGaN material properties on Si doping has already been reported, but some observed trends are not well understood yet, e.g. the effect of Si on the defect formation, alloy disorder, and stress relaxation in AlGaN is still under discussion. The observed strong correlation between electrical and optical properties is generally explained by a random distribution of impurities and defects that may produce local strain and potential fluctuations. However, little direct information on the spatial compositional distribution and local structure of Si in AlGaN lattice is available.

In this study, we report the application of synchrotron radiation X-ray microprobe to the study of Si impurities in plasma-induced molecular bema epitaxy (PIMBE) grown Al0.32Ga0.68N. The synchrotron-related data were collected at the LUCIA beamline of Soleil installed at the Swiss Light Source (Villigen, Switzerland). Elemental maps obtained by micro-x-ray fluorescence spectrometry show inhomogeneous distributions of Si, Al, and Ga on the micron scale. X-ray absorption near-edge structure spectra taken at the Si and Al K edges provided information about their local chemical environment and revealed the change of the spectral features as depending on the position compared to the sample surface and on the concentration of Si.

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: must be provided.


Related papers
  1. Surface band bending at n-type and p-type InN by Auger Electron Spectroscopy
  2. AlGaN/GaN based optical and electrical sensors
  3. Alignment of SiC quantum dots on silicon substrates
  4. 3C-SiC:Ge alloys grown on Si (111) substrates by solid source MBE
  5. Kinetic Monte Carlo simulation of SiC nucleation on Si(111)
  6. The role of Ge predeposition temperature in the epitaxy of SiC on Silicon
  7. Studies on sub-band gap absorption in AlGaN photoconductors and solar-blind photodetectors

Presentation: Poster at E-MRS Fall Meeting 2007, Symposium I, by Andrea Somogyi
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-14 12:57
Revised:   2009-06-07 00:44
© 1998-2021 pielaszek research, all rights reserved Powered by the Conference Engine