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Sergei Dvoretsky
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Affiliation:
Institute of Semiconductor Physics (ISP)
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pr. Lavrentieva 13, Novosibirsk, 630090,
Russian Federation
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Participant:
E-MRS Fall Meeting 2003
began:
2003-09-15
ended:
2003-09-11
Presented:
E-MRS Fall Meeting 2003
MBE growth of HgCdTe layers and their properties in the context of IR applications
Publications:
Changes in 8-12 mm CdHgТe photodiode arrays caused by fast neutron radiation
Linear 288×4 long wavelength infrared mercury cadmium telluride detector
Matrix 320×256 infrared long wavelength detector with inner short wavelength cut-off filter
MBE growth of HgCdTe layers and their properties in the context of IR applications
Properties of MBE CdxHg1-xTe/GaAs structures modified by ion-beam milling
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