Usually the producers of LWIR detectors (8-14 mkm) used external short wavelength cut-off filter (lower 7 mkm) to decrease background illumination. We developed the design and growth procedure in MBE technology of MCT heteroepi-taxial structure (HS) with built-in inner short wavelength cut-off filter. The additional high level wider gap layer before absorber at MCT HS MBE was grown to decrease sequence resistance and realize short wavelength cut-off filter. This layer creates the conditions same voltage biases applied to each diode of FPA and needed for planned spectral response range. For elimination interference between cut-off filter layer and absorber additionally barrier layer was grown. The In-doping cut-off filter layer in range concentration 2×10¹⁴ cm^-3 - 5×10¹⁷ cm^-3 did not change the LWIR spectral response. The numerical calculations of spectral response of photodiode arrays for different thick-ness and composition of cut-off filter and barrier layers were carried out. The NETD formula for IR CMOS detectors with cut-off layer was deduced. Matrix 320×256 IR CMOS LWIR detectors with built-in inner In-doped cut-off filter layer were fabricated. This layer allows to decrease the background illumination and realize storage time up to 200 mks. The detectors parameters (78К, 300, 300К) at maximum sensitivity are the following: sensitivity Sv ~ (1÷3)×10⁸ V/W, threshold power P ~ (1,5÷2,5)×10^-7 W/cm².

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