Despite the fact that ion beam milling (IBM) is a promising method for Cd_xHg_1-xTe photodiode arrays production only a little investigation has been made for MBE grown epitaxial layers. So the main aim of this paper was to investigate the modification of electrical properties under IBM in MBE Cd_xHg_1-xTe structures with variable band gap layers (1.5 μm thickness with gradually increasing Cd content up to x=0.4) near the both active layer interfaces. Both n-type (as-grown) and p-type (obtained by thermal annealing in He atmosphere) MBE structures grown on (310) GaAs substrates with 4 μm thickness CdTe buffer layer were studied.
It was revealed that IBM results in creation of n-type layer in p-Cd_xHg_1-xTe with thickness that determined by initial acceptor concentration. But the value of the converted layers thickness were much more smaller than it will be predicted by theory for the uniform Cd_xHg_1-xTe samples with the same acceptor concentration and IBM conditions. These distinctions are due to the presence of the wide gap graded surface layer, which results in decrease of the conversion rate. The character of carrier concentration distribution over the structure depth for both n-type and p-type samples was the same as for the uniform Cd_xHg_1-xTe samples. Namely, for the p-type samples the electron concentration in thin subsurface damage layer (2-3 μm) with high electron concentration and low mobility is linearly decreased from surface to sample depth and then - (the main part of n-type layer with low electron concentration and high mobility) electron concentration has constant value that corresponds to the residual donor concentration. The hole concentration and mobility in unconverted region of formed p-n structures are the same as in the samples before IBM.

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