The abstract reports first results of studying thermoluminescent (TL) properties of heterojunctions n-PbS/p-ZnTe assembled for designing cooled focal plane arrays and active elements operating in near-IR spectral range. Heterostructures were prepared by molecular-beam epitaxy of lead sulfide films on monocrystalline (110)-ZnTe wafers. Electrical measurements performed in wide temperature range (77 - 300 K) were demonstrated the sufficient effect of 2D space-charge region localized at the interface. TL was excited by samples enlightening from the side of lead sulfide film as well as from the substrate side by 550 nm and 700 nm light sources and N2-laser. The data obtained show that the energy depth of radiation centers is 0.31 - 0.49 eV. Photoluminescense (PL) was excited by UV-light source from PbS film side. PL spectral distribution was presented by gaussian-like curve with maximum localized in 500 - 620 nm range.

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