The latest successful development of smart technologies, in particular, molecular-beam epitaxy technique and pulse-laser deposition method, made it possible to manufacture optoelectronic active elements based on semiconductor materials with sufficient mismatch of the lattice parameters. This problem is of special interest for preparing photosensitive devices with strained superlattices. The abstract focuses on the numerical analysis and computational modeling of energy spectra of charge carriers in mechanically strained superlattices based on semiconductor materials from A2B6 and A4B6 (ZnSe, ZnTe and PbS) playing an important part in the optoelectronics design. Computational modeling is settled on the solution of one-dimensional Schroedinger equation and Poisson equation. The simple numerical algorithm is proposed for simulation of the superlattice energy structure in dependence of doping impurity concentration, thickness of the grown layers and their crystallographic orientation.

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