The interaction of dot lattice defects with self-consistent deformation field, caused by dot defects, results in a formation of ranked defect-deformation (DD) structures: clusters and periodic structures. The reason of the appearance of non-uniform deformation, which results in local change of the band spectrum, is the presence of DD-structures. As a consequence, the spatial redistribution of electrons takes place, which gives birth to the electrostatic potential. The aim of the present work is to study the conditions of the appearance of an n-n+ junction in a crystal with dot defects in the framework of the model of electron-deformation potential.

The main results. The criterion of the appearance of an n-n+ junction is concentration of lattice defects. At concentration of defects n_d0<n_dc1 (n_d0 - medial concentration of defects) the processes of self-organizing of defects are absent and, accordingly, a n-n+ junction is absent. Within the interval of concentration of defects n_dc1<n_d0<n_dc2 the clusters in a crystal are formed, which are the reason of non-uniform deformation. In a result, there is a shortage of electrons in of one part of a crystal, and surplus - in another. Thus, the double electrical layer is formed in a crystal with dot defects. At medial concentration of defects n_d0>n_dc2 the defect periodic structures are formed. Accordingly, redistribution of electrons will have periodic character, and the sequentially joint n-n+ junctions appear.

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