E-MRS Fall Meeting 2009

 on-line journal

No.
 Presenting person
 Title
C-1 Ahmed S. Abdinov Investigation of p-Si/Cd0.3Zn0.7S0.8Se0.2 heterostructures with intermediate nano-granular layer of CdTe
C-2 Hanna Bandarenka Electrochemical deposition of ZnO films on silicon with Ni buffer layer
C-3 Friedhelm Bechstedt Parameter-free calculations of electronic properties and optical transitions of MgO, ZnO, and CdO
C-4 Serge A. Beznosyuk Physicochemical approach to chalcogenide passivation processing of III-Vsemiconductor surfaces
C-5 Serge A. Beznosyuk Computer simulation of stability of gallium nitride nanofilm
C-6 Abdelhamid Chari Analytical potential for atomistic study of hydrogen bonding and diffusion in ZnO
C-7 Suk-Ho Choi Optical, structural, and magnetic properties of V-implanted ZnO
C-8 Min Young Cho Effects of growth interruption of ZnO buffer layer on properties of ZnO epitaxial layer on Si (100)
C-9 Vitalij G. Deibuk Quantum computations in ZnO:Fe3+ system
C-10 Rosa E. Diaz In-situ catalytic growth of Gallium Nitride nanowires using an environmental transmission electron microscope
C-11 George P. Dimitrakopulos Interfacial structure of semipolar AlN grown on m-plane sapphire by PAMBE
C-12 Carlos A. Duque Binding energy of a hydrogenic impurity in vertical-coupled wurtzite GaN/AlGaN quantum-dots under hydrostatic pressure and external applied electric field
C-14 Ionut Marius Enculescu CdTe homojunction nanowire diodes
C-15 Petro Fochuk Electrical properties of CdTe:Br single crystals at high temperature
C-16 Belete A. Gonfa ZnO Nanostructures for Photovoltaic Cells
C-17 Kamel Guergouri Physical properties of pure and Co-doped ZnO nanoparticules
C-18 Kamel Guergouri Structural and optical studies of pure and Al-doped ZnO nanopowders
C-19 Su Min Jeon Structural and optical properties of ZnO epitaxial layers grown on ZnO buffer layers with different interrupts by molecular beam epitaxy
C-20 Mohamed Kechouane Structural, optical and electrical properties of a-Si1-xCx:H films synthesized by DC-magnetron co-sputtering technique
C-21 Mohamed Kechouane Low-temperature deposition of ZnO thin films by DC reactive sputtering at high oxygen partial pressure
C-22 Ghun Sik Kim Annealing effects of the initial Zn layers on properties of ZnO thin films grown by plasma-assisted molecular beam epitaxy
C-23 Philomela Komninou The (10-10)/(2-1-12) grain boundary in nonpolar GaN:Atomic structure and influence on defect introduction
C-24 Tomasz A. Krajewski Electrical and optical properties of zinc oxide layers obtained by Atomic Layer Deposition
C-25 Robert Kudrawiec Contactless electroreflectance of ZnSe layers grown by atomic layer epitaxy
C-26 Ju-Young Lee Structural and optical properties of Mg0.1Zn0.9O/ZnO multilayer grown by Pulsed Laser Deposition
C-27 Ju-Young Lee Growth and characteristics of annealed n-ZnO/p-6H-SiC heterostructure
C-28 Mike Leszczynski Surface morphology of InGaN layers
C-29 Kalju Lott High temperature defect equilibrium in ZnS:Cu single crystals
C-30 Małgorzata I. Łukasiewicz Effects related to deposition temperature of ZnCoO films grown by Atomic Layer Deposition – uniformity of Co distribution, structural, electric and magnetic properties
C-31 Alain Lusson Nitrogen-doped and Antimony-doped ZnO thin layers grown by MO-VPE
C-32 Orest P. Malyk Charge carrier mobility in ZnCdTe and ZnSe
C-33 Mikhail Chubarov Thermostimulated electron-hole processes in  GaN and AlGaN thin films. 
C-34 Marco Peres Growth of non-polar (10.0) ZnO thin films on MgO (100) using rf-magnetron sputtering
C-35 Jose R. Ramos-Barrado Electronic structure of sputtering deposited undoped and Ga-doped ZnO thin films on a commercial Cz-Si solar cell substrate.
C-36 Jose R. Ramos-Barrado SURFACE MORPHOLOGY OF ZnO/ZnS bilayer obtained by Chemical Spray Pyrolysis
C-37 Nebojsa Romcevic Far-infrared and Raman Spectroscopy of CdTe0.97Se0.03(In)
C-38 Nebojsa Romcevic Raman scattering from ZnO doped with Fe, Mn and Co nanoparticles
C-39 Habib Rozale Electronic and magnetic properties of Co-doped ZnO: first principles study
C-40 Iryna A. Rybalka Influence of structural defects upon electrophysical and scintillation characteristics of wide band gap ZnSe(Te) crystals for UV sensors and X-ray detectors
C-41 Vincent Sallet Surface morphology studies of ZnO layers grown using MOCVD
C-42 Andriy I. Savchuk Comparative study of Mn-doped II-VI semiconductors in form of bulk crystals, thin films and nanocrystals
C-43 Adrien Savoyant Hybridization and magnetic anisotropy of S-state ions in wurtzite DMS
C-44 Dariusz Smoleń Synthesis of aluminum nitride nanopowder; compare methods for determination of the grain size in nanopowders 
C-45 Stepan V. Syrotyuk The electronic energy band spectrum of A2B6 crystals evaluated with the density gradient corrected exchange-correlation potential derived from the new functional
C-46 Nikolai V. Tarasenko Properties of Zinc Oxide Nanoparticles Synthesized by Electrical Discharge Technique in Liquids
C-47 Carol Trager-Cowan Electron Channelling Contrast Imaging of Defects in Nitride Semiconductor Thin Films 
C-48 Kohei Ueno Epitaxial growth of semipolar AlxGa1-xN(1-103) films on ZnO substrates using room temperature buffer layer
C-49 Mykola Vuichyk Influence of heavily doped n-Si(111) substrate on optical properties of the AlN thin films
C-50 Łukasz Wachnicki Thin films of ZnS and ZnSe by Atomic Layer Deposition for light sensor applications
C-51 Ching Hong Wong Electrodeposition of n-type Zinc Oxide Thin Films on Flexible Plastics
C-52 Jan Wróbel Hybrid functional applied to the study of properties of narrow and wide band gap semiconductors
C-53 Michał Dutkiewicz Towards single-source alkylzinc alkoxy and hydroxy precursors for ZnO nanoparticles. 
C-54 Vincent Sallet Structural characterizations of ZnO based one-dimensional nanostructures grown by MOCVD
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