Usually the charge carrier scattering processes in ZnCdTe and ZnSe are considered in relaxation time approximation. However, these models have essential shortcoming – they are long-range which contradict special relativity. From the other side in [1,2] the short-range models of electron scattering were proposed for CdHgTe and CdHgSe  in which the above mentioned shortcomings were absent. The purpose of the present work is to use this approach for description of the charge carrier scattering in ZnCdTe and ZnSe.

For the charge carrier scattering on the nonpolar optical and acoustic phonons, neutral defects, disorder and static strain potential the interaction radius of the short-range potential is limited by one unit cell. For the charge carrier scattering on the ionized impurity, polar optical and piezoelectric (piezoacoustic and piezooptic) phonons the interaction radius of the short-range potential is founded in a form R=g  a (a - lattice constant, g  – the respective adjusting parameters).

To calculate the conductivity tensor components the method of a precise solution of the stationary Boltzmann equation was used [3].  The temperature dependences of the charge carrier mobility in the range 4.2 – 370 K in   Zn_xCd_1-xTe (0≤x≤1) and ZnSe crystals are calculated. The influence of the different scattering mechanisms on the charge carrier mobility is considered. A good agreement between theory and experiment in all investigated   temperature range is established. The scattering parameters g for different scattering modes are determined.  

[1] O.P. Malyk. Materials Science & Engineering. 2006. B 129. 161-171.

[2] O.P. Malyk. Physica Status Solidi(c). 2009. 6, No.S1. 586-589.

[3]  O.P. Malyk.  WSEAS Trans. Math. 2004. 3. 354- 357.

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1. Inelastic electron-polar optical phonon scattering in wide gap CdHgTe alloys