Time
|
Duration
|
Type
|
Presenting person
|
Title
|
September 14th, Monday |
|
| 14:00 |
|
Keynote lecture |
Wladek Walukiewicz |
Applications of group III-nitride alloys for multijunction solar cells |
| 14:45 |
00:15:00 |
Oral |
Jean-Marc Routoure |
Low frequency noise measurements in InN films |
| 15:00 |
00:30:00 |
Invited oral |
Marie-Antoinette Di Forte Poisson |
LPMOCVD growth of InAlN/GaN HEMT heterostructures. Comparison of composite SiCopSiC and bulk SiC substrates for HEMT device applications |
| 15:50 |
00:30:00 |
Invited oral |
Christian Wetzel |
Wavelength-Stable Green Light Emitting Diodes in Non-Polar GaInN/GaN Quantum Well Growth |
| 16:20 |
00:15:00 |
Oral |
Philomela Komninou |
Microstructure of InN grown on Si (111) by plasma-assisted MBE using a double buffer layer |
| 16:35 |
00:15:00 |
Oral |
Yoshihiro Ishitani |
Effects of threading dislocations and other defects on reduction of band-edge photoluminescence in n-InN films |
| 16:50 |
00:15:00 |
Oral |
Pierre Ruterana |
The microstructure and properties of InN layers |
| 17:05 |
00:15:00 |
Oral |
Mingwei Zhu |
Inclined Dislocation Pair Formation as a Mechanism of Partial Strain Relaxation in GaInN/GaN Quantum Wells on Low-Dislocation Density Bulk GaN |
| 17:20 |
00:30:00 |
Invited oral |
Akihiko Kikuchi |
InGaN/GaN nanocolumn LEDs and selective area growth of GaN nano-crystals by rf-plasma assisted molecular beam epitaxy |
September 15th, Tuesday |
|
| 08:30 |
|
Keynote lecture |
Tatiana V. Shubina |
InN/In nanocomposites: plasmonic effects and optical properties |
| 09:15 |
00:15:00 |
Oral |
Arantxa Vilalta Clemente |
Investigation of InN layers grown by molecular beam epitaxy on Si or GaN templates |
| 09:30 |
00:15:00 |
Oral |
Jochen Raethel |
Optical anisotropy of a- and m-plane InN grown on free-standing GaN substrates |
| 09:45 |
00:15:00 |
Oral |
Egidijus Sakalauskas |
Optical properties of InN grown on Si(111) substrate |
| 10:00 |
00:30:00 |
Invited oral |
Arnab Bhattacharya |
MOVPE growth and characterization of InN and related heterostructures |
| 10:50 |
00:30:00 |
Invited oral |
Olivier Briot |
Recent advances in the MOVPE growth of Indium Nitride |
| 11:20 |
00:15:00 |
Oral |
Carol Trager-Cowan |
Luminescence and structural studies of In-containing III-nitrides |
| 11:35 |
00:15:00 |
Oral |
Sirona Valdueza-Felip |
Non-linear absorption measurements of InN/InGaN multiple-quantum-wells structures at 1.5 µm using the Z-Scan method |
| 11:50 |
00:45:00 |
Keynote lecture |
Akio Yamamoto |
Recent Advances in InN-based Solar Cells; Status and Challenges in InGaN and InAlN Solar Cells |
| 14:00 |
00:30:00 |
Invited oral |
Tomohiro Yamaguchi |
Growth of InN and Related Alloys Using Droplet Elimination by Radical Beam Irradiation |
| 14:30 |
00:15:00 |
Oral |
Nils A K. Kaufmann |
Study on Indium Gallium Nitride Quantum Wells: A Comparison between MBE grown and MOVPE grown Quantum Wells |
| 14:45 |
00:15:00 |
Oral |
Christian Rauch |
In-vacancies in Si-doped InN |
| 15:00 |
00:30:00 |
Invited oral |
Takashi Inushima |
Meissner effect of superconducting InN |
| 15:50 |
00:30:00 |
Invited oral |
Chung-Lin Wu |
Cross-sectional scanning photoelectron microscopy/spectroscopy studies on the electronic structures of InN surface and interface |
| 16:20 |
00:15:00 |
Oral |
Anja Eisenhardt |
Changes in the valence band structure of as-grown InN(0001) surfaces upon exposure to oxygen and water |
| 16:35 |
00:15:00 |
Oral |
Ben Hourahine |
Vacancies in InN and In rich InGaN |
| 16:50 |
00:15:00 |
Oral |
Xinqiang Wang |
Polarity determination of InN by using circular photogalvanic effect |
| 17:05 |
00:15:00 |
Oral |
Christian Friedrich |
Preparation and surface structure of InN(0001) and InxGa1-xN(0001) surfaces |
| 17:20 |
00:30:00 |
Invited oral |
Miguel A. Sanchez-Garcia |
MBE growth and characterization of InN-based layers and nanostructures for infrared applications |
September 16th, Wednesday |
|
| 08:30 |
00:45:00 |
Keynote lecture |
Friedhelm Bechstedt |
Spectral properties of InN and related compounds from first principles |
| 09:15 |
00:30:00 |
Invited oral |
Izabela Gorczyca |
In-segregation induced anomalous behavior of band gap and its pressure coefficient in InAlN and InGaN. Theory and Experiment |
| 09:45 |
00:45:00 |
Keynote lecture |
Chris G. Van de Walle |
Sources of doping for InN bulk and surfaces |
| 10:50 |
00:45:00 |
Keynote lecture |
Akihiko Yoshikawa |
Recent advances and challenges in p-type doping of InN and InN-based novel nanostructures |
| 11:35 |
00:30:00 |
Invited oral |
Tim Veal |
Interface, bulk and surface electronic properties of InN |
| 12:05 |
00:30:00 |
Invited oral |
James S. Speck |
Progress in the MBE Growth of InN |
| 14:00 |
00:45:00 |
Keynote lecture |
Hadis Morkoc |
New Twists in LEDs and HFETs based on Nitride Semiconductors |
| 14:45 |
00:45:00 |
Keynote lecture |
Daniela Cavalcoli |
Capacitance and surface voltage charge techniques.
Surface Photovoltage Spectroscopy. Method and Applications. |
| 15:50 |
00:45:00 |
Keynote lecture |
Raphaël Butté |
Optical properties of low-dimensional nitride semiconductors |
| 16:35 |
00:45:00 |
Keynote lecture |
Ruediger Goldhahn |
Optical properties of bulk-like nitride semiconductors |
