InAlN material is a very attractive material as compared to the conventional GaAlN material, for electronics devices. InAlN with 17% of In is lattice matched on GaN, and a high spontaneous polarisation is predicted from theoretical studies. Therefore, material with low strain and low defect density induced is expected together with a very high two dimensional electron gas density at the InAlN/GaN heterojunction.

The optimisation of the MOCVD growth of InAlN/GaN HEMT structures on bulk SiC and SiCopSiC composite substrates and the related device performances are reported in this paper. The InAlN/GaN HEMT heterostructures grown on composite substrates are successfully compared in terms of material quality to the standard InAlN/GaN HEMT Heterostructures grown on bulk SiC substrates.

HEMT devices based on InAlN/GaN heterostructures grown on SiC substrates exhibited an output power density of 10.4W/mm, with a Power Added Efficiency PAE of 52% at 10 GHz. Compared to the published results, that represents the state of the art power performances obtained from AlInN based HEMT. This result strengthens the performance projections made about InAlN based technology, which predicted AlInN based heterostructures as a potential successor to GaAlN/GaN HEMTs for microwave power applications.

Present research work has been supported by the French Ministry of Defence (DGA / STTC, Contract 01/34/050, Korrigan project RTP n° 102.052) and the European Community (Hyphen and Ultragan projects).

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