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Interface, bulk and surface electronic properties of InN

Tim Veal ,  Phil D. King ,  Chris F. McConville 

University of Warwick, Department of Physics, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom

Abstract
A three-region model of the high n-type conductivity in InN will be presented, including contributions from the bulk, interface with the buffer layer and surface of the InN films. In particular, a parallel conduction analysis is used to show that this model can account for the variation of both the Hall effect-measured electron concentration and the mobility with film thickness. For a set of In-polarity InN samples grown on GaN buffer layers under the same conditions (V/III ratio and temperature), as the film thickness is varied from 200 to 12000 nm, the electron density changes from 2 × 1019 cm-3 to 3 × 1017 cm-3 and the mobility from 300 cm2V-1s-1 to 2000 cm2V-1s-1 [1,2]. Similar results have also been observed for InN films grown on AlN buffer layers [3]. The findings of additional studies of the effects of the V/III ratio during growth on the interface-related electron density will also be presented. Finally, our results will be placed in the context of recent data from other groups and the origins of the interface, surface and bulk conductivity will be discussed.

[1] L. F. J. Piper, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 88 (2006) 252109.

[2] P. D. C. King, T. D. Veal, C. F. McConville, J. Phys.: Condens. Matter 21 (2009) 174201.

[3] V. Cimalla, V. Lebedev, F. M. Morales, R. Goldhahn, and O. Ambacher, Appl. Phys. Lett. 89 (2006) 172109.

 

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Presentation: Invited oral at E-MRS Fall Meeting 2009, Symposium A, by Tim Veal
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-04-18 11:37
Revised:   2009-06-07 00:48