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Electrical and optical properties of Mg-doped InN

Wojciech M. Linhart 1Tim Veal 1Phil D. King 1Chris F. McConville 1Chito Kendrick 2Steven M. Durbin 2

1. University of Warwick, Department of Physics, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
2. Department of Electrical and Computer Engineering, The MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury, Christchurch, New Zealand, Christchurch, New Zealand


The ability to reproducibly achieve p-type doping is a prerequisite for many device applications of InN. Straightforward characterization of p-type conductivity of Mg-doped samples using single-field Hall effect is prevented by the presence of a surface inversion space-charge layer, whereby the surface electron-rich region dominates the measurements.  However, several different groups have recently reported that Mg doping during growth by molecular-beam epitaxy produces p-type conductivity [1-3].  The techniques that have so far been applied to studying Mg-doping of InN include electrochemical capacitance-voltage (ECV) profiling [1-3], variable magnetic field Hall effect [2], and thermopower measurements [4].

Here, an investigation of Mg-doped InN samples grown by plasma-assisted molecular beam epitaxy is reported. The Mg concentration ranged from 3 × 1017 to 1 × 1020 cm-3, as determined by secondary ion mass spectrometry. The samples have been characterized by Hall effect, thermopower, ECV measurements, x-ray photoemission spectroscopy, infrared absorption and reflectivity. The dependence of the experimental data on the Mg concentration will be reported, giving insight into the impact of the surface inversion layer on characterization of Mg-doped InN.

[1] R. E. Jones, et al., Phys. Rev. Lett. 96, 125505 (2006).

[2] P.A. Anderson, et al., Appl. Phys. Lett. 89, 184104 (2006).

[3] X. Wang, et al., Appl. Phys. Lett. 91, 242111 (2007).

[4] J. W. Ager III et al., Phys. Stat. Sol. B 245, 873 (2008).


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Presentation: Poster at E-MRS Fall Meeting 2009, Symposium A, by Wojciech M. Linhart
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-04-18 12:26
Revised:   2009-06-07 00:48