The ability to reproducibly achieve p-type doping is a prerequisite for many device applications of InN. Straightforward characterization of p-type conductivity of Mg-doped samples using single-field Hall effect is prevented by the presence of a surface inversion space-charge layer, whereby the surface electron-rich region dominates the measurements.  However, several different groups have recently reported that Mg doping during growth by molecular-beam epitaxy produces p-type conductivity [1-3].  The techniques that have so far been applied to studying Mg-doping of InN include electrochemical capacitance-voltage (ECV) profiling [1-3], variable magnetic field Hall effect [2], and thermopower measurements [4].

Here, an investigation of Mg-doped InN samples grown by plasma-assisted molecular beam epitaxy is reported. The Mg concentration ranged from 3 × 10¹⁷ to 1 × 10²⁰ cm^-3, as determined by secondary ion mass spectrometry. The samples have been characterized by Hall effect, thermopower, ECV measurements, x-ray photoemission spectroscopy, infrared absorption and reflectivity. The dependence of the experimental data on the Mg concentration will be reported, giving insight into the impact of the surface inversion layer on characterization of Mg-doped InN.

[1] R. E. Jones, et al., Phys. Rev. Lett. 96, 125505 (2006).

[2] P.A. Anderson, et al., Appl. Phys. Lett. 89, 184104 (2006).

[3] X. Wang, et al., Appl. Phys. Lett. 91, 242111 (2007).

[4] J. W. Ager III et al., Phys. Stat. Sol. B 245, 873 (2008).

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