Time
|
Duration
|
Type
|
Presenting person
|
Title
|
September 14th, Monday |
|
| 12:30 |
LUNCH - (maps available at the Reception desk) - building of the Faculty of Physics |
September 15th, Tuesday |
|
| 09:00 |
Lectures - Room 144 |
| 09:00 |
00:30:00 |
Keynote lecture |
Gregory N. Gol'tsman |
Superconducting hot-electron bolometer based on NbN nanostructures as THz mixer, direct detector and IR single-photon counter |
| 09:30 |
00:30:00 |
Invited oral |
Wojciech Knap |
Comparison of Silicon Versus III-V Semiconductor Material Choice for Terahertz Imaging with Fast Field Effect Transistors Based Detectors |
| 10:00 |
00:30:00 |
Invited oral |
Hui Chun Liu |
THz Quantum Devices |
| 10:30 |
COFFEE - Main Hall |
| 11:00 |
Lectures - Room 144 |
| 11:00 |
00:30:00 |
Invited oral |
Sergey D. Ganichev |
All electrical detection of the Stokes parameters of infrared/terahertz radiation |
| 11:30 |
00:30:00 |
Invited oral |
Alexander Shkurinov |
Porous and oxide materials in the terahertz frequency range |
| 12:00 |
00:15:00 |
Oral |
Valerii V. Shulga |
Design of IF extra-low power consumption amplifiers at ≤ 1 K for terahertz matrix receivers, bolometer arrays and quantum devices |
| 12:15 |
00:15:00 |
Oral |
Vaidas Pačebutas |
GaBiAs layers for terahertz optoelectronic devices activated by 1 μm wavelength laser pulses |
| 12:30 |
LUNCH - (maps available at the Reception desk) - building of the Faculty of Physics |
| 14:00 |
Lectures - Room 144 |
| 14:00 |
00:30:00 |
Invited oral |
Robert Rehm |
Physics, Technology and Performance of Strained Layer Superlattice Infrared Detectors |
| 14:30 |
00:30:00 |
Invited oral |
Sanjay Krishna |
Infrared Detectors with Quantum Dots and Type II InAs/GaSb Strained Layer Superlattices |
| 14:45 |
00:15:00 |
Oral |
Yuksel Ergun |
Photoconductive Properties of GaAs-AlGaAs Broad Band Quantum Well Infrared Photodetectoers |
| 15:00 |
00:15:00 |
Oral |
Frank Szmulowicz |
Two materials studies on residual background carriers and density dependent carrier mobilities in InAs/GaSb superlattices |
| 15:30 |
COFFEE - Main Hall |
| 16:00 |
Lectures - Room 144 |
| 16:00 |
00:15:00 |
Oral |
Maciej Bugajski |
High pulse power mid-infrared AlGaAs/GaAs quantum cascade lasers |
| 16:15 |
00:15:00 |
Oral |
Subhananda Chakrabarti |
A comparative study of single layer and bi-layer InAs/GaAs quantum dots (QDs) with higher InAs monolayer coverage |
| 16:30 |
00:15:00 |
Oral |
Maxym Strikha |
Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg1-xCdxTe |
| 16:45 |
00:15:00 |
Oral |
Dorota Pierscinska |
Thermal analysis of GaAs/AlGaAs quantum – cascade lasers |
September 16th, Wednesday |
|
| 09:00 |
Lectures - Room 144 |
| 09:00 |
00:30:00 |
Keynote lecture |
Hans-Peter Roeser |
Electron transport in nanostructures: the key to high temperature superconductivity |
| 09:30 |
00:15:00 |
Oral |
Jean-Marc Routoure |
La0.7Sr0.3MnO3 thin films for uncooled bolometers |
| 09:45 |
00:30:00 |
Invited oral |
Hans Zogg |
Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides |
| 10:15 |
00:15:00 |
Oral |
Ahmed Al-Jumaily |
Transparent electroactive films for optical applications |
| 10:30 |
COFFEE - Main Hall |
| 11:00 |
Lectures - Room 144 |
| 11:00 |
00:30:00 |
Invited oral |
Jozef Piotrowski |
Room temperature infrared photodetectors |
| 11:30 |
00:15:00 |
Oral |
Antoni Rogalski |
History of HgTe-based photodetectors in Poland |
| 11:45 |
00:15:00 |
Oral |
Paweł Madejczyk |
Acceptor doping control in MOCVD grown HgCdTe layers. |
| 12:00 |
00:15:00 |
Oral |
Eugene M. Sheregii |
Far-infrared reflectivity as a probe of point defects in Zn- and Cd-doped HgTe |
| 12:30 |
LUNCH - (maps available at the Reception desk) - building of the Faculty of Physics |
| 14:00 |
Lectures - Room 144 |
| 14:00 |
00:15:00 |
Oral |
Malgorzata M. Pociask |
The study of HgCdTe MBE-grown structure with ion milling |
| 14:15 |
00:15:00 |
Oral |
Alexander M. Samoylov |
The determination of solubility limits of gallium impurity in PbTe films doped with Ga on Si substrates |
| 14:30 |
00:15:00 |
Oral |
Sergei Dvoretsky |
Linear 288×4 long wavelength infrared mercury cadmium telluride detector |
| 15:30 |
COFFEE - Main Hall |
| 16:00 |
Poster Session - Main Hall |
| 16:00 |
#D-1 |
Poster |
Nicolas N. Berchenko |
The influence of laser shock waves on anodic oxide-HgCdTe interface |
| 16:00 |
#D-2 |
Poster |
Nicolas N. Berchenko |
Effect of low ion beam milling and anodic oxidation on electrical properties of HgCdTe subsurface layers |
| 16:00 |
#D-3 |
Poster |
Elena N. Budianu |
Metal-semiconductor-metal photodetector on silicon on insulating wafers based on nanoscale interdigitated electrodes E. Budianu, M. Purica, A. Dinescu, E. Manea |
| 16:00 |
#D-4 |
Poster |
Subhananda Chakrabarti |
Increasing the size of InAs/GaAs multilayer coupled quantum dots with low defect density by using a InAlGaAs quaternary capping layer |
| 16:00 |
#D-5 |
Poster |
Andrzej Czerwinski |
Silicon planar source of modulated infrared radiation |
| 16:00 |
#D-6 |
Poster |
Sergei Dvoretsky |
Matrix 320×256 infrared long wavelength detector with inner short wavelength cut-off filter |
| 16:00 |
#D-7 |
Poster |
Dmitriy G. Esaev |
Bolometer detectors for registration of terahertz radiation |
| 16:00 |
#D-8 |
Poster |
Dmitry I. Gorn |
Energy-band diagrams and capacity-voltage characteristic of CdxHG1-xTe-based variband structures calculated with taking into account the dependence of electron affinity on the composition |
| 16:00 |
#D-9 |
Poster |
Yuliya Gudenko |
Shallow acceptors in quantum wells of the Si/Si1-X Ge X stressed heterostructures: application for detectors and sources of the Terahertz radiation |
| 16:00 |
#D-10 |
Poster |
Ihor I. Izhnin |
Ion milling-assisted study of defect structure of HgCdTe layers grown by liquid phase epitaxy on CdZnTe substrates |
| 16:00 |
#D-11 |
Poster |
Mikhail Y. Leonov |
Calculation of radiation defect profiles in CMT subjected to high power laser beams |
| 16:00 |
#D-12 |
Poster |
Ihor Lysiuk |
Changes in 8-12 mm CdHgТe photodiode arrays caused by fast neutron radiation |
| 16:00 |
#D-13 |
Poster |
Natalia I. Momot |
Use of CdxHg1-xTe compound as a material for THz and sub-THz detector |
| 16:00 |
#D-14 |
Poster |
Taras L. Petrenko |
Nature of Ga deep centers in lead telluride based semiconductors |
| 16:00 |
#D-15 |
Poster |
Alexander M. Samoylov |
electrical properties of lead telluride single crystals doped with bromine |
| 16:00 |
#D-16 |
Poster |
Fedir F. Sizov |
THz/sub-THz bolometer based on electron heating in the semiconductor waveguide |
| 16:00 |
#D-17 |
Poster |
Bogdan S. Sokolovskii |
Modeling of an IR variable-gap photodiode with the trapezoid-like profile of energy band diagram |
| 16:00 |
#D-19 |
Poster |
Ihor S. Virt |
Electrical and optical properties of HgTe/CdTe superstructures |
| 16:00 |
#D-20 |
Poster |
Alexander V. Voitsekhovskii |
Capacitance-voltage characteristics of MIS-structures in base on graded-band MBE Hg1-xCdxTe at passivation epitaxial grown in situ CdTe |
| 16:00 |
#D-21 |
Poster |
Alexander V. Voitsekhovskii |
The influence of near-surface graded-band layers on electrical properties of MIS-structures in base on MBE HgCdTe |
| 16:00 |
#D-22 |
Poster |
Iman Yahyaie |
Dynamic heterodyned polarization imaging: studying polarization dynamics in materials at gigahertz frequencies |
