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prof Alexander V. Voitsekhovskii

e-mail:
phone: +7-3822-412772
fax: +7-3822-412772
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Affiliation:


Tomsk State University

address: Lenina, 36, Tomsk, 634050, Russian Federation
phone:
fax:
web: http://www.tsu.ru

Publications:


  1. Calculation of radiation defect profiles in CMT subjected to high power laser beams
  2. Capacitance-voltage characteristics of MIS-structures in base on graded-band MBE Hg1-xCdxTe at passivation epitaxial grown in situ CdTe
  3. Energy-band diagrams and capacity-voltage characteristic of CdxHG1-xTe-based variband structures calculated with taking into account the dependence of electron affinity on the composition
  4. The influence of near-surface graded-band layers on electrical properties of MIS-structures in base on MBE HgCdTe



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