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prof Alexander V. Voitsekhovskii
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+7-3822-412772
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+7-3822-412772
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Affiliation:
Tomsk State University
address:
Lenina, 36, Tomsk, 634050,
Russian Federation
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fax:
web:
http://www.tsu.ru
Publications:
Calculation of radiation defect profiles in CMT subjected to high power laser beams
Capacitance-voltage characteristics of MIS-structures in base on graded-band MBE Hg
1-x
Cd
x
Te at passivation epitaxial grown in situ CdTe
Energy-band diagrams and capacity-voltage characteristic of Cd
x
HG
1-x
Te-based variband structures calculated with taking into account the dependence of electron affinity on the composition
The influence of near-surface graded-band layers on electrical properties of MIS-structures in base on MBE HgCdTe
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