The development of molecular beam epitaxy methods give to possibility of optimization of parameters of infrared photodetectors in base on Hg_1-xCd_xTe used control of distribution of composition Cd along thickness of epitaxial film. In this wotk the influence of graded-band layers on value of differential resistance of space charge region in MIS-structures in base on MBE HgCdTe (x=0.225) are investigated.  For structures in base on n-Hg_0.78Cd_0.22Te product of differential resistance of space charge region by area amount about 15 Ohm×cm².  Confirm that tunnel recombination via deep levels in near-surface layer of semiconductor severely influence on value of differential resistance of space charge region in MIS-structures in base on n-Hg_0.78Cd_0.22Te without graded-band layers. It is shown that in MIS-structures creation of near-surface graded-band layers lead to suppress tunnel recombination via deep levels. The probability reason of limited of differential resistance in MIS-structures with graded-band layers is a background photogeneration and diffusion of minority carriers in sub-electrode  region.  The electro-physical and photo-electrical properties of MIS-structures in base on p-Hg_0.78Cd_0.22Te with various distributions of composition in near-surface graded-band layers are investigated. It is shown that increase of content  Cd at surface from 0.33 to 0.48-0.58 lead to suppress of interband generation-recombination and increase of differential resistance of space charge region. It is shown that small-siganl photo-emf give information about differential resistance of space charge region and dependencies of photo-emf graded-band MIS-structures in base on n-HgCdTe (x=0.225 and x=0.292) and p-HgCdTe (x=0.225) versus temperature and voltage bias are investigated, the mechanisms of limitation of value of differential resistance of space charge region at various conditions are analysed.

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1. Energy-band diagrams and capacity-voltage characteristic of Cd_xHG_1-xTe-based variband structures calculated with taking into account the dependence of electron affinity on the composition
2. Calculation of radiation defect profiles in CMT subjected to high power laser beams
3. Capacitance-voltage characteristics of MIS-structures in base on graded-band MBE Hg_1-xCd_xTe at passivation epitaxial grown in situ CdTe