Anodic oxide is widely used to passivate HgCdTe-based photoconductive detectors. However structures on anodic oxide have not sufficient stability. This makes necessary developing a new method to improve thermal stability of such structures. The laser shock wave treatment seems a promising option. Neodymium-glass laser pulses with 30 ns width were used to induce a shock wave in the samples under room temperature. The experiment has shown that the induced positive charge value an the anodic oxide- HgCdTe interface approached to its constant value under influence of laser shock waves. This kind of treatment is found to decrease electron concentration in a converted n-type layer by one order of magnitude in annealed anodic oxide- HgCdTe structures. Additionally, the findings show that the annealing time needed to have this layer disappeared decreases as well. The most relevant mechanism of the interaction between laser shock waves and the anodic oxide- HgCdTe interface in believed to involve the interface rebuilding which implies that elemental mercury and related charge is pressed back from the CdTeO₃ layer being right on the interface, and complexes with oxygen vacancies are formed.     

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/19817 must be provided.

1. Effect of low ion beam milling and anodic oxidation on electrical properties of HgCdTe subsurface layers