Time
|
Duration
|
Type
|
Presenting person
|
Title
|
September 15th, Tuesday |
|
| 09:00 |
00:30:00 |
Keynote lecture |
Gregory N. Gol'tsman |
Superconducting hot-electron bolometer based on NbN nanostructures as THz mixer, direct detector and IR single-photon counter |
| 09:30 |
00:30:00 |
Invited oral |
Wojciech Knap |
Comparison of Silicon Versus III-V Semiconductor Material Choice for Terahertz Imaging with Fast Field Effect Transistors Based Detectors |
| 10:00 |
00:30:00 |
Invited oral |
Hui Chun Liu |
THz Quantum Devices |
| 11:00 |
00:30:00 |
Invited oral |
Sergey D. Ganichev |
All electrical detection of the Stokes parameters of infrared/terahertz radiation |
| 11:30 |
00:30:00 |
Invited oral |
Alexander Shkurinov |
Porous and oxide materials in the terahertz frequency range |
| 12:00 |
00:15:00 |
Oral |
Valerii V. Shulga |
Design of IF extra-low power consumption amplifiers at ≤ 1 K for terahertz matrix receivers, bolometer arrays and quantum devices |
| 12:15 |
00:15:00 |
Oral |
Vaidas Pačebutas |
GaBiAs layers for terahertz optoelectronic devices activated by 1 μm wavelength laser pulses |
| 14:00 |
00:30:00 |
Invited oral |
Robert Rehm |
Physics, Technology and Performance of Strained Layer Superlattice Infrared Detectors |
| 14:30 |
00:30:00 |
Invited oral |
Sanjay Krishna |
Infrared Detectors with Quantum Dots and Type II InAs/GaSb Strained Layer Superlattices |
| 14:45 |
00:15:00 |
Oral |
Yuksel Ergun |
Photoconductive Properties of GaAs-AlGaAs Broad Band Quantum Well Infrared Photodetectoers |
| 15:00 |
00:15:00 |
Oral |
Frank Szmulowicz |
Two materials studies on residual background carriers and density dependent carrier mobilities in InAs/GaSb superlattices |
| 16:00 |
00:15:00 |
Oral |
Maciej Bugajski |
High pulse power mid-infrared AlGaAs/GaAs quantum cascade lasers |
| 16:15 |
00:15:00 |
Oral |
Subhananda Chakrabarti |
A comparative study of single layer and bi-layer InAs/GaAs quantum dots (QDs) with higher InAs monolayer coverage |
| 16:30 |
00:15:00 |
Oral |
Maxym Strikha |
Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg1-xCdxTe |
| 16:45 |
00:15:00 |
Oral |
Dorota Pierscinska |
Thermal analysis of GaAs/AlGaAs quantum – cascade lasers |
September 16th, Wednesday |
|
| 09:00 |
00:30:00 |
Keynote lecture |
Hans-Peter Roeser |
Electron transport in nanostructures: the key to high temperature superconductivity |
| 09:30 |
00:15:00 |
Oral |
Jean-Marc Routoure |
La0.7Sr0.3MnO3 thin films for uncooled bolometers |
| 09:45 |
00:30:00 |
Invited oral |
Hans Zogg |
Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides |
| 10:15 |
00:15:00 |
Oral |
Ahmed Al-Jumaily |
Transparent electroactive films for optical applications |
| 11:00 |
00:30:00 |
Invited oral |
Jozef Piotrowski |
Room temperature infrared photodetectors |
| 11:30 |
00:15:00 |
Oral |
Antoni Rogalski |
History of HgTe-based photodetectors in Poland |
| 11:45 |
00:15:00 |
Oral |
Paweł Madejczyk |
Acceptor doping control in MOCVD grown HgCdTe layers. |
| 12:00 |
00:15:00 |
Oral |
Eugene M. Sheregii |
Far-infrared reflectivity as a probe of point defects in Zn- and Cd-doped HgTe |
| 14:00 |
00:15:00 |
Oral |
Malgorzata M. Pociask |
The study of HgCdTe MBE-grown structure with ion milling |
| 14:15 |
00:15:00 |
Oral |
Alexander M. Samoylov |
The determination of solubility limits of gallium impurity in PbTe films doped with Ga on Si substrates |
| 14:30 |
00:15:00 |
Oral |
Sergei Dvoretsky |
Linear 288×4 long wavelength infrared mercury cadmium telluride detector |
