Basic aspects of acceptor doped HgCdTe layers grown by MOCVD are presented. HgCdTe (111) layers were grown on GaAs (100) substrates in 350°C horizontal reactor using IMP deposition method. TDMAAs and AsH₃ were alternatively used as a effective p-type doping precursors. Incorporation and activation rates of arsenic were studied. Over a wide range of Hg_1-xCd_xTe compositions (0.17<x<0.4) arsenic doping control from 5∙10¹⁵cm^-3 to 5∙10¹⁷cm^-3 was obtained without post growth anneal. SIMS profiles, Hall and minority carrier lifetime measurement results are presented for chemical and electrical carrier concentrations characterization. Presented device quality p-type layers show Auger-7 process as a dominant lifetime limiting mechanism.

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