E-MRS Fall Meeting 2009

on-line journal

No.	Presenting person	Title
A-1	Adebowale O. Ajagunna	Thickness dependence of electrical properties of c- and a-plane InN films
A-2	Duc V. Dinh	The influence of surfactant and the nucleation process to InN growth by metal-organic vapor phase epitaxy
A-5	Thomas Kehagias	Electron microscopy of InGaN nanorods spontaneously grown on Si (111) substrates
A-6	Francesco Ivaldi	TEM investigation of processed InGaN based laser grown by PAMBE on bulk GaN substrate
A-7	Slawomir Kret	Inhomogeneities of InGaN/GaN MOVPE multi quantum wells grown with two temperatures process studied by transmission electron microscopy.
A-8	Huaping Lei	Role of threading dislocations on Indium distribution in InGaN alloys
A-9	Wojciech M. Linhart	Electrical and optical properties of Mg-doped InN
A-11	Saulius Nargelas	Investigation of optical nonlinearities in InN layers by using time-resolved differential transmission and light-induced transient grating techniques
A-12	Floris Reurings	Irradiation-induced defects in InN and GaN studied with positron annihilation
A-13	Filip Tuomisto	Could positrons be used to study interface properties in nitride devices?
A-14	Sirona Valdueza-Felip	Morphological, structural and optical properties of high-quality InN on GaN-template films deposited by RF sputtering
A-15	Tim Veal	Time-resolved differential transmission and photoluminescence studies of recombination mechanisms in Mg-doped InN
A-16	Arantxa Vilalta Clemente	Structural properties of InAlN thin layers for HEMT applications