Search for content and authors

Morphological, structural and optical properties of high-quality InN on GaN-template films deposited by RF sputtering

Sirona Valdueza-Felip 1Fernando B. Naranjo 1Miguel González-Herráez 1Lise Lahourcade 2Eva Monroy 2Susana Fernández 3

1. University of Alcalá (UAH), Madrid-Barcelona Road, Km 33,600, Madrid 28871, Spain
2. CEA-CNRS, Nanophysique et Semiconducteurs, 17 rue des Martyrs, Grenoble 38054, France
3. Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas (CIEMAT), Avda. Complutense 22, Madrid 28040, Spain


Poly-crystalline Indium Nitride deposited by reactive sputtering presents a room-temperature direct apparent optical bandgap around 1.8 eV, making it very attractive for optoelectronic applications like high-efficency low cost solar cells, optical coatings and optical sensors. In this work, we report on a detailed study of the influence of deposition parameters on the crystalline quality, surface morphology and optical properties of InN films grown on GaN-on-sapphire substrates by reactive radio frequency (RF) sputtering. InN samples present a wurzite crystallographic structure and a highly c-axis preferred growth orientation, as confirmed by X-ray diffraction measurements. In a pure N2 atmosphere the growth conditions under study are the substrate temperature, RF power and N2 pressure. The optical properties were studied through transmission measurements. The apparent optical bandgap was estimated close to 690 nm (1.79 eV) for InN samples deposited at 450ºC and 3.5 mTorr. For samples deposited at temperatures above 450ºC a slight blueshift of 0.02 eV of the bandgap was observed. The sputtering pressure seems to strongly influence the InN absorption edge due to a change of the species in the plasma composition with a damage of the InN surface. However, RF power does not appear to affect the bandgap position. The surface morphology of the InN films was analyzed by atomic force microscopy in a surface of 5x5 µm2. The morphological quality of the InN samples was highly improved at the optimized conditions. At low substrate temperatures (400°C) and low RF powers (20W and 30W) high surface quality InN films were achieved, with root-mean-square surface roughness as low as ~0.4 nm, comparable to the surface roughness of the GaN-template substrate. Our results indicate that the reactive RF sputtering is a promising deposition technique for obtaining high quality InN layers on GaN-template substrates with low cost and good compatibility with other optoelectronic devices.


Legal notice
  • Legal notice:

Related papers

Presentation: Poster at E-MRS Fall Meeting 2009, Symposium A, by Sirona Valdueza-Felip
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-25 17:31
Revised:   2009-06-07 00:48