The characteristics of Cd_xHg_1-xTe hot-electron microbolometer as a detector for THz and sub-THz radiation are studied and discussed. The device operation is grounded on the phenomena in semiconductor bipolar plasma and hot-carrier effect. In this device, the radiation heats only electron gas without the semiconductor lattice heating. Sensitive elements of microbolometer are the epitaxial layers with following parameters: n- and p-type     Cd_xHg_1-xTe with 50x50 µm and 10x50 µm sizes. Samples have been irradiated by radiation with 37 GHz, 78 GHz, 95 GHz, 129 GHz, 0.89 THz and 1.58 THz frequencies. Temperature dependencies of photoresponse in 68÷300K temperature region were investigated. Investigations have shown that detector is sensitive to radiation in mentioned wavelength region. In the temperature range T=68÷300 K volt-watt sensitivity and calculated noise-equivalent power of n-type sample at 8 mm wavelength are as following: S_v=10 V/W at Т=300 К and S_v=4∙10² V/W at Т=77 К, NEP ~10^–10 W/Hz^1/2 at Т=300 К and ~ 10^–12 W/Hz^1/2 at Т=77 К. The model of hot-electron detector is discussed.

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