Investigation of InN layers grown by molecular beam epitaxy on Si or GaN templates

Arantxa Vilalta Clemente 1Marie P. Chauvat 1Javier Grandal 2Miguel A. Sanchez-Garcia 2Fernando Calle 2Magali Morales 1Evgenia Valcheva 3Kiril Kirilov 3Jean Louis Doualan 1Pierre Ruterana 1

1. CNRS-ENSICAEN, Boulevard du Maréchal Juin, Caen 14050, France
2. Universidad Politécnica de Madrid, Ciudad Universitaria, Madrid 28040, Spain
3. Sofia University, Dept. of Solid State Physics and Microelectronics, 5 J. Bourchier blvd., Sofia 1164, Bulgaria


The evolution of surface morphology and stress of molecular beam epitaxy InN/(Si,GaN) heteroepitaxial deposited layers have been investigated by X-ray Diffraction, Raman spectroscopy and Transmission Electron Microscopy. The nominal thickness of the InN layers was between 150 and 750 nm. Atomic force microscopy (AFM) observations show that under specific growth conditions, step flow growth has taken place, independent of the layer thickness. For the surface morphology and roughness in 1μm x 1μm areas, we attain values of root-mean-square (rms) as low as 0.393 nm for the best sample. XRD investigations of the in plain compressive biaxial stress versus layer thickness indicate that the relaxation may not follow a conventional trend as expected with a complete relaxation within the largest thickness layers, and as evidenced for InN films epitaxially grown by radiofrequency magnetron sputtering. The results show that, in the studied samples, the strain does not appear to have a monotonic evolution versus thickness. The structural properties of these layers will be correlated with Raman, TEM and photoluminescence measurements.

Acknowledgment: This work is supported by the EU under the Grant agreement N°: PITN-GA-2008-213238, Initial training network RAINBOW of the 7 RTD Framework and the French-Bulgarian bilateral Programme PAI-RILA, project No DOO2-25/2008/NIS 2536

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Presentation: Oral at E-MRS Fall Meeting 2009, Symposium A, by Arantxa Vilalta Clemente
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-25 16:44
Revised:   2009-06-07 00:48
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