Recombination processes with and without momentum conservation in degenerate InN

Evgenia Valcheva 3S. Alexandrova 1S. Dimitrov 3H. Lu 2William J. Schaff 2

1. Institute of Solid State Physics, Bulgarian Academy of Sciences (ISSP-BAS), 72, Tzarigradsko Chaussee blvd., Sofia 1784, Bulgaria
2. Cornell University, Electrical and Computer Engineering, Ithaca, NY 14853-540, United States
3. Sofia University, Dept. of Solid State Physics and Microelectronics, 5 J. Bourchier blvd., Sofia 1164, Bulgaria


The evaluation of InN fundamental properties and parameters like band gap, effective mass values, phonon modes, etc., of both poly- and monocrystalline InN layers is a subject of permanently growing number of reports. Photoluminescence experiments are widely used to investigate the nature of the recombination processes. Applied to high concentration material the experiment is usually used for the determination of the effective optical band-gap assuming band filling and renormalization effects.
We report on a theoretical approach in which two cases of recombination in optically excited high concentration n-InN are considered: an electron occupying a conduction state can only decay to a valence state with the same wave vector, and the other, in which the probability is essentially independent of the wave vectors of the two states (no momentum conservation). The latter is applicable when the donors have random distribution in the real space. For high impurity concentrations the periodicity of the lattice is perturbed and the momentum conservation is partly lifted so that all available carriers can contribute to the total radiative recombination. The calculations are used to fit emission spectra of unintentionally doped (~1×1018 -1×1019cm–3) InN layers studied in the temperature range 10-300K with excitation wavelength of 488 nm and recorded with PbS detector. The spectra peak at around 0.7eV and can be well fitted disregarding the momentum conservation law.

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: must be provided.


Related papers
  1. Investigation of InN layers grown by molecular beam epitaxy on Si or GaN templates
  2. The microstructure and properties of InN layers
  3. In-vacancies in Si-doped InN
  4. Irradiation-induced defects in InN and GaN studied with positron annihilation
  5. Compositional modulation in the InxGa1-xN layers; relation to their optical properties
  6. Conduction band anisotropy of InN and GaN studied by synchrotron ellipsometry
  7. Surface band bending at n-type and p-type InN by Auger Electron Spectroscopy
  8. Acceptor states in photluminescence of n-InN
  9. Band Structure and Properties of InN and In-rich In1-xGaxN Alloys
  10. Quantized Electron Accumulation, Inversion Layers and Fermi Level-Stabilization in Indium Nitride
  11. Valence band structure of InN from x-ray photoemission studies
  12. InN explained within chemical trends
  13. Resonant tunneling and intersubband absorption in AlN-GaN-superlattices

Presentation: oral at E-MRS Fall Meeting 2005, Symposium A, by Evgenia Valcheva
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-30 13:27
Revised:   2009-06-07 00:44
© 1998-2021 pielaszek research, all rights reserved Powered by the Conference Engine