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William J. Schaff

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Affiliation:

Cornell University

address: 425 Philips Hall, Ithaca, NY, 14853, United States
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Publications:
  1. In-vacancies in Si-doped InN
  2. Irradiation-induced defects in InN and GaN studied with positron annihilation

  3. Acceptor states in photluminescence of n-InN

  4. Band Structure and Properties of InN and In-rich In1-xGaxN Alloys

  5. Compositional modulation in the InxGa1-xN layers; relation to their optical properties

  6. Conduction band anisotropy of InN and GaN studied by synchrotron ellipsometry

  7. InN explained within chemical trends

  8. Quantized Electron Accumulation, Inversion Layers and Fermi Level-Stabilization in Indium Nitride

  9. Recombination processes with and without momentum conservation in degenerate InN

  10. Surface band bending at n-type and p-type InN by Auger Electron Spectroscopy

  11. Valence band structure of InN from x-ray photoemission studies

  12. Resonant tunneling and intersubband absorption in AlN-GaN-superlattices



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