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Acceptor states in photluminescence of n-InN

Albert A. Klochikhin 4V. Y. Davydov 2V. V. Emtsev 2A V. Sakharov 2V. A. Kapitonov 2B. A. Andreev 3Hai Lu 1William J. Schaff 

1. Cornell University, Electrical and Computer Engineering, Ithaca, NY 14853-540, United States
2. Ioffe Physico-Technical Institute, RAS, Saint-Petersburg, Russian Federation
3. Institute for Physics of Microstructures RAS, Russian Federation
4. St.Petersburg Nuclear Physics Institute RAS (PNPI), Orlova Roshcha, Gatchina 188300, Russian Federation


The first observations of near-infrared interband optical transitions in InN were reported for samples with carrier concentrations close to 1*1019 cm-3. Recent progress in the growth techniques has made it possible to grow n-InN films with improved characteristics. For example, the best samples are characterized by carrier concentrations of about 4*1017 cm-3 and room temperature Hall mobilities higher than 2100 cm2/Vs.

We present results of the recent optical studies of the interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6*1017 to 6*1018 cm-3. The well resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of Eda=0.050-0.055 eV and the other one is attributable to the LO-phonon replica of this band. The higher energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of Esh=0.005-0.010 eV and/or to the states of Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. Relative intensities of two higher energy PL peaks were found to be strongly dependent on temperature and excitation power.


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Presentation: invited oral at E-MRS Fall Meeting 2005, Symposium A, by Albert A. Klochikhin
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-19 09:41
Revised:   2009-06-07 00:44