III-V nitride semiconductors grown on different substrates contain a very high density of threading dislocations. Some of them can form low-angle grain boundaries, and for the most important disorientation high-angle grain boundaries. For specific rotation angles, coincidence orientations are obtained and be given in the concept of coincidence site lattice (CSL). The atomic structure of these coincidence orientations is periodic and based on a limited number of structural units. For the coincidence tilt grain boundaries around [0001] axis in wurtzite structure, the shape of the unit cell is a lozenge and the two diagonals corresponding to the largest density of coincidence sites can be chosen to describe them. Since some experimental grain boundaries are not described by the edge or the shortest diagonal of the CSL unit cell, we present the atomic structure of the second diagonal. These diagonal boundaries contain the same structural units then the edge boundaries. Their atomic structures are determined in the range from 0^o to 60^o, and compared to the atomic structures of the edge.

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