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Gerard Nouet

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Affiliation:

SIFCOM, UMR6176, CNRS-ENSICAEN

address: 6 Bld Maréchal Juin, Caen, 14050, France
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Affiliation:

Laboratoire de Physique Theorique, Groupe de Physique du Solide, Universite A.Mira

address: , BEJAIA, , Algeria
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Participant:

E-MRS Fall Meeting 2005

began: 2005-09-05
ended: 2005-09-09
Presented:
E-MRS Fall Meeting 2005

The atomic configuration of tilt grain boundaries around <0001> in GaN

Publications:
  1. FE and MD simulation of InGaN QD formation induced by stress field of threading dislocations
  2. Microstructure of InN grown on Si (111) by plasma-assisted MBE using a double buffer layer

  3. Ab-initio tight-binding study of the core structures of the c edge dislocation in wurtzite GaN

  4. Energy and electronic structure of gallium and nitrogen interstitials in GaN Tilt Boundaries

  5. Structural properties of quaternary InAlGaN MQWs grown by plasma-assisted MBE

  6. The atomic configuration of tilt grain boundaries around <0001> in GaN




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