The electronic structures of an embedded layer in GaN are investigated by means of the first-principles full-potential linearized augmented plane waves method within the local density approximation (LDA). A supercell approach with periodic boundaries is used to study such systems. It is shown that InN and AlN substitution atomic layers embedded in GaN modifies the localization of electronic charge distribution in the valence band maximum (VBM) and in the conduction band minimum (CBM) of InN/GaN and AlN/GaN systems. We discuss also the change of the band gap which depends on the depth of the substitution layer in GaN.

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