In order to investigate the electronic and magnetic properties of Co-ZnO alloys, we used a full-augmented-plane-wave (FPLAPW) method within the density functional theory (DFT), as implement in the WIEN2K package. This work is carried out within the LSDA approximation as the exchange-correlation potential. We have modelled ZnO doped with 6.25%, 12.5%, and 18.75% of Co. It pointed out that the band gap and the magnstic moments increase with the atomic fraction of Cobalt. The Zn_xCo_1-xO is found to be a semiconductor, where the filled-states are located in the valence bands and the empty ones above the conduction dand edge. The filled and empty d-states are also shown to shoft downwards and upwards in the valence and the conduction bands, respectevly, with increase in the U potential. The total density of states (TDOS) and local density of states (LDOS) of the d electrons shed light on the evolution of the elctronic properties.

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3. Low frequency noise measurements in InN films
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6. Optical properties of InN grown on Si(111) substrate
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16. Finite element modelling of nonlinear elastic and piezoelectric properties of InN and InGaN QDs
17. Structural analysis of the behaviour of the ultrathin AlN capping layer interface during the RE implantation and annealing of GaN for electroluminescence applications
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22. First principles study of electronic structure of InN and AlN substitution atomic layers embedded in GaN
23. Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN
24. Image processing of HREM micrograph for determination size distribution of Co nanocrystals in Cu matrix
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