The InN band gap (0.7 eV) and its predicted high electron mobility have generated a great interest on InN-based heterostructures for photovoltaic devices (multi-junction solar cells) and high power/high speed electronic devices. InN-based alloys are also promising materials for high-efficiency optoelectronic devices (laser diodes and detectors) for optical communications in the near infrared (IR) range.

This work presents a study and revision on the growth and characterization of InN-based layers and nanostructures by plasma-assisted molecular beam epitaxy (MBE) using different substrates (i.e. Si(111), Si(100) and GaN templates). The effective III/V ratio employed during the growth clearly determines the morphology of the InN layers. N-rich conditions lead to InN nanorods, while the growth under slightly In-rich conditions yields a compact morphology. Structural characterization is performed by electron microscopy techniques (HRTEM, SEM), while optical properties are analyzed with photoluminescence (PL) and Raman techniques.

This work also focuses on the structural and optical characterization of InN/InGaN MQWs heterostructures designed to emit in the 1.5 um window. Finally, electrical transport properties and the issue of charge accumulation at the surface of InN layers are discussed in order to assess the viability to fabricate practical InN-based electronic devices.

This work was partially funded by the Initial training network RAINBOW of the 7 RTD Framework and the Community of Madrid through the project FUTURSEN, CAM S-0505/AMB-0374.

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1. Spontaneous and ordered growth of III-N nanorods on polar and non-polar substrates
2. Investigation of InN layers grown by molecular beam epitaxy on Si or GaN templates
3. Low frequency noise measurements in InN films
4. Optical properties of InN grown on Si(111) substrate
5. Nitride-based Surface Acoustic Waves Devices and Applications