ZnO-based semiconductors are recognized as promising materials for optoelectronic application in ultraviolet (UV) light emtting diodes (LEDs) and laser diode (LDs). Because ZnO has a larger exciton binding energy (60 meV) which could lead to lasing action based on exciton recombination even at room temperature than other wide band gap materials. Another advantage is that it is easily controllable band gap from 3.3 to 4.0 eV by alloying ZnO with MgO. Additionally, In order to obtain high-performance UV LED devices, a heterojunction is one of the key structures to realize double confinement actions for electrons and photons in optoelectronic devices. MgZnO alloy is considered to be suitable potential barrier layer for ZnO. Recently, there are many studies on forming the ternary alloy of Mg_xZn_1-xO. However, most of the reports were focused on the fabrication of MgZnO alloy film and MgZnO/ZnO quantum wells (QWs) by molecular beam epitaxy (MBE).

In this study, Mg_0.1Zn_0.9O/ZnO multilayers were grown on p-GaN/sapphire (0001) by Pulsed Laser Deposition (PLD) with different thickness. Multilayer MgZnO design is expected to improve optical and thermal characteristics of LEDs with ZnO-based active regions. The structure properties of the Mg_0.1Zn_0.9 O multilayer were investigated by XRD, AFM and SEM and the optical properties were studied by PL.

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