ZnO is under consideration for a variety of potential uses for optoelectronic devices due to its wide band gap of 3.37 eV and large exciton binding energy of 60 meV at room temperature. However, ZnO has difficult to obtain the high quality and reproducible p-type material. In an alternative approach, there have been some attempts to grow n-ZnO on other p-type materials fore realizing ZnO based p-n heterojunctions. One of the important factors of heterostructures is the close lattice match of the components. In this respect, 6H-SiC is a good candidate for ZnO based heterostructure devices. Considering the ZnO lattice, lattice mismatch has been estimated to be ~5 % between ZnO and SiC. Although SiC substrate has these many advantages, there have been only a few reports on the growth n-type ZnO on p-type 6H-SiC heterostructure diodes and these reports were mostly studied on growth by MOCVD or MBE. In this letter, we report on the growth and post-thermal annealing of n-ZnO/p-6H-SiC heterostructure by sputtering system and on their properties. The n-type ZnO films were grown on 6H-SiC substrate and post thermal annealed in the oxidation furnace. The surface morphology was observed with atomic force microscopy (AFM) and X-Ray diffraction (XRD) measurements were carried out for the ZnO films. Moreover optical properties of the ZnO films were studies with Photoluminescence (PL). We observed that the structural properties and crystallinity of n-ZnO/p-SiC are improved by post thermal annealing and obtained high quality of the ZnO films on SiC substrate, which might be attributed to the small lattice mismatch.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/19238 must be provided.

1. Structural and optical properties of Mg_0.1Zn_0.9O/ZnO multilayer grown by Pulsed Laser Deposition
2. Characterization of n-Mg_xZn_1-xO/ZnO/p-GaN double heterostructure grown by pulsed laser deposition
3. ZnO Thin Films on Sapphire (0001) Substrates Annealed in Oxygen
4. Gallium and Arsenic Co-doped ZnO Thin Films Deposited by Pulsed Laser Deposition