The transparent conductive oxides as ZnO have been widely studied. As a promising wide band gap semiconductor, ZnO thin films with varied dopant is important in fabricating the photonic devices to meet the various needs. In this study, Gallium and arsenic co-doped ZnO thin films were deposited at different temperatures ( 100-600^oC ) on sapphire (001) and Si (100) by using pulsed laser deposition technique. X-ray diffractmeter (XRD), atomic force microscope (AFM), spectrophotometer, spectrometer were used to characterize the structural and optical properties the thin films. Hall measurements were also carried out to identify the electrical properties of the thin films. XRD results indicated that the co-doped ZnO thin films showed preferred (002) orientation. The transmittances of the thin films were nearly 100%. The band gap energies of the thin films were determined by a linear fit of the transmittance spectra. The photoluminescence measurements indicated that the thin films were very high optical qualities. The luminescence due to defect was highly quenched, only the near band edge emissions were observed. Hall measurements indicated that the co-doped thin films were very conductive and with high hall mobility.

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