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ZnO Thin Films on Sapphire (0001) Substrates Annealed in Oxygen

Fukai Shan ,  Guoxia Liu ,  Won-Jae Lee ,  Byoung-Chul Shin 

Electronic Ceramics Center, DongEui University, 995 Eomgwangno, Busan-Jin-Gu, Busan 614714, Korea, South

Abstract

Pulsed laser deposition (PLD) is a very efficient technique for the fabrication of the thin films, especially for the fabrication of metal oxide thin films at low temperature. In PLD system, the KrF excimer laser (l = 248 nm) is used to ablate ZnO target. During ablation the target is melted because of the irradiation of the high-energy pulsed laser. The melted zinc oxide is then evaporated and the plasma is produced during the process. High-quality zinc oxide thin films are deposited on the sapphire (0001) substrates at room temperature. Rapid thermal annealing process is followed to process the thin films at different temperatures (100, 200, 300, 400, 500, and 600oC, respectively) in oxygen or in air for 10 minutes. X-ray diffraction (XRD), optical transmission, Raman spectroscopy, photoluminescence (PL), and atomic force microscopy (AFM) are used to characterize the thin films. It is found that the thin films annealed at higher temperatures are preferred (002) orientation, but the thin films annealed at low temperatures are amorphous nature. The band gap energies are determined from the transmission data by spectrophotometer. PL results reveal that the thin films annealed in air have two emissions. One is the near band emission; the other is the famous green-yellow emission in ZnO thin films. The green-yellow emissions are depressed when the thin films are annealed in oxygen.

 

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Related papers

Presentation: Poster at E-MRS Fall Meeting 2006, Symposium F, by Fukai Shan
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-21 06:22
Revised:   2009-06-07 00:44