prof Mike Leszczynski

Affiliation:

Polish Academy of Sciences, Institute of High Pressure Physics

Participant:

E-MRS Fall Meeting 2002

Participant:

E-MRS Fall Meeting 2005

Participant:

Nano2business workshop

Participant:

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Participant:

E-MRS Fall Meeting 2009

Participant:

Nanotechnologia PL 2011

Participant:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Publications:

1. Blue laser diodes manufacturing in Poland
2. Bowing of epitaxial structures grown on bulk GaN substrates
3. Built-in electric fields in group III-nitride light emitting quantum structures
4. Efficiency „droop” in nitride light emitters
5. GaN substrates with variable surface miscut for laser diode applications
6. Inhomogeneities of InGaN/GaN MOVPE multi quantum wells grown with two temperatures process studied by transmission electron microscopy.
7. Microstructure of homoepitaxially grown InGaN/GaN, violet light emitting laser diodes.
8. Multicolor laser diode arrays for medical applications
9. Nitrides lasers after BluRay
10. PLASTIC PROPERTIES OF GaN AND Al_2O_3 CRYSTAL: FEM-SIMULATION OF NANOINDENTATION CONFIRMED BY HIGH-RESOLUTION MICROSCOPY
11. Polymer film-coated high electron mobility transistors, based on GaN heterostructures, as sensors for some benzene derivatives

12. Rietveld refinement for polycrystalline indium nitride

13. Surface morphology of InGaN layers
14. The Blue Laser
15. The optimalisation of the GaN and GaN/AlGaN heterojunctions on bulk crystals using plasma-assisted molecular beam epitaxy
16. X-ray Diffraction as a Tool of InGaN layer Characterization.