In this work the influence heavily doped n-Si(111) substrates on the growth and optical properties AlN thin films is investigated, because of AlN is perspective material for optoelectronic. AlN films with the thickness of 0.45-0.85 μm were grown by means of high frequency magnetron sputtering method. Deposition rate of films was 1.5-3 nm/min. For substrates used n-Si(111) (electron concentration N_e = 2.5∙10¹⁹ cm^-3). The reflection spectra of n-Si(111) substrates and AlN/n-Si(111) thin films in range 200-750 nm and in range 1.4 - 25 μm were measured and also the elipsometric investigations were performed for the information about optical characteristics of thin films. The value of refractive index in range 505-675 nm (nearby maximums) of the AlN/n-Si(111) films is equal 2.13. Results of the elipsometric investigations are shown a value 2.11 of refractive index AlN films, which are typical for policrystals. In infrared reflection spectra AlN/n-Si(111) films there is a characteristic stripe of absorption conditioned by TO-vibrations of AL-N bonds. From data of the reflection spectra following physical parameters have been obtained: plasma frequency ω_p, electron mobility μ_e, phenomenological broadening parameter Г, energy relaxation time τ_i, relaxation time of free carriers over the pulse τ_p.

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1. Raman scattering and infrared spectroscopy of Si-doped GaN thin films