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Raman scattering and infrared spectroscopy of Si-doped GaN thin films

Mykola Vuichyk ,  Igor Yanchuk ,  Petro Gentsar ,  Oksana Lytvyn ,  Mykola Zayats 

V.Lashkaryov Institute of Semiconductor Physics NAS Ukraine (ISP), Nauky prosp., Kyiv 03028, Ukraine


In the present work the Raman scattering spectra and infrared reflection spectra of GaN thin films with the thickness of 2-2.5 mm, grown by MOCVD method on sapphire substrates, oriented along the c axis, are investigated. The GaN thin films were doped with Si. AFM studies show the smooth surface of the GaN thin films. In the Raman spectra of the GaN thin films an E2 phonon mode and an A1(LO) phonon mode are revealed. In the infrared spectra an A1(TO) mode and an A1(LO) mode of wurtzite GaN are detected. The A1(LO) mode is a function of the free electron density. From the known relationships, the density of free electrons was calculated from the A1(LO) peak frequency. The presence of mechanical strain in the thin films and the substrate is shown. The experimental results of the studies of the Si-doped GaN thin films grown by MOCVD method, show the wurtzite hexagonal structure of the GaN thin films with the density of free electrons within 1018 – 1019 cm-3.


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Presentation: Poster at E-MRS Fall Meeting 2008, Symposium J, by Mykola Vuichyk
See On-line Journal of E-MRS Fall Meeting 2008

Submitted: 2008-05-19 12:53
Revised:   2009-06-07 00:48