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CdTe homojunction nanowire diodes

Ionut Marius Enculescu 1Elena Matei 1Lucian Ion 2Stefan Antohe 2

1. National institute for Materials physics (NIMP), Atomistilor 105 bis, Bucharest 77125, Romania
2. University of Bucharest, Faculty of Physics, Bucharest-Magurele mg-11, Bucharest 76900, Romania


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Electrodeposition in nanoporous templates represents an interesting method for the preparation of semiconducting nanostructures such as nanowires, mainly due to the possibility of up-scaling with relatively low costs, a quality important for applications. In the present paper we report our results regarding the preparation of CdTe homojunctions by using a single electrodeposition bath. In order to achieve this result we exploited the possibility of varying the electrical behaviour of the semiconducting segment by varying the deposition potential. This property was exploited in fabricating multisegment nanowires with taylored transport properties. Such an ingenious approach is much more convenient from the experimental point of view, opening possibilities to fabricate a new generation of ultraminiaturized devices. The wires were characterized for basic properties using scanning electron microscopy, energy dispersive X ray analysis, optical spectroscopy and X-ray diffraction. Measurement of the transport properties showed that we were able to tune the junction behaviour for both metal – semiconductor and semiconductor – semiconductor from ohmic to rectifying.


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Presentation: Poster at E-MRS Fall Meeting 2009, Symposium C, by Ionut Marius Enculescu
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-25 17:02
Revised:   2009-06-07 00:48